Resistive switching conducting filament electroformation with an electrothermal phase field method

Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in 'reading' and 'writing' operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding...

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

Available online 17 September 2012

Observation of conducting filament growth in nanoscale resistive memories.

Nanoscale resistive switching devices, sometimes termed memristors, have recently generated significant interest for memory, logic and neuromorphic applications. Resistive switching effects in dielectric-based devices are normally assumed to be caused by conducting filament formation across the electrodes, but the nature of the filaments and their growth dynamics remain controversial. Here we r...

Enhanced stability of filament-type resistive switching by interface engineering

The uncontrollable rupture of the filament accompanied with joule heating deteriorates the resistive switching devices performance, especially on endurance and uniformity. To suppress the undesirable filaments rupture, this work presents an interface engineering methodology by inducing a thin layer of NiOx into a sandwiched Al/TaOx/ITO resistive switching device. The NiOx/TaOx interface barrier...

Conducting Nanofilaments in Metal Oxide Resistive Switching Memory